Determination of Binding Energies and Wave Functions in Quantum Wells from Raman Resonance Cross Section Measurements

We study the resonance profiles of L 0 phonon and hole intersubband Raman signals from p-type modulation doped AlAs GaAs AlGaAs quantum wells. The resonance profiles show very pronounced sharp peaks at electronic resonance energies. We show that the energies at wh.ich the Raman resonances occur are directly related to the electron subband energies in the conduction band well. We study quantum wells which are up to 745 %i wide. We determine the binding energy of bound levelsiithe conduction band wellup to n = 18. We determine the conduction band nonvarabolicitv experimentally. The intensity at the Raman resonance peaks is modulated by an envelope func6on which is refated to the ov&lap integral of the electron and the hole wavefunction. Thus we determine the Fourier components of the hole wavefunction in terms of the conduction band wavefunctions.